Low VCE(sat) IGBT, High speed IGBT

Low VCE(sat) IGBT High speed IGBT Features l International standard packages l 2nd generation HDMOSTM process l Low VCE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at

文件：64.36 Kbytes 页数：2 Pages

IXYS

艾赛斯

Low VCE(sat) IGBT High speed IGBT

Low VCE(sat) IGBT High speed IGBT l International standard packages\nl 2nd generation HDMOSTM process\nl Low VCE(sat)\n  - for low on-state conduction losses\nl High current handling capability\nl MOS Gate turn-on\n  - drive simplicity\nl Voltage rating guaranteed at high temperature (125°C)\n\nApplications\nl AC motor speed control;

Littelfuse

力特

Package：TO-204AE；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：POWER MOSFET TO-3

IXYS

艾赛斯

Low VCE(sat) IGBT, High speed IGBT

Low VCE(sat) IGBT High speed IGBT Features l International standard packages l 2nd generation HDMOSTM process l Low VCE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at

文件：64.36 Kbytes 页数：2 Pages

IXYS

艾赛斯

Package：TO-204AE；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：POWER MOSFET TO-3

IXYS

艾赛斯