IXGM20N80数据表ic资料贸易商无锡固电IXYS-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXFC20N80P	文件：139.47 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFC20N80P	文件：323.81 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH20N80P	文件：336.99 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.52Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH20N80P	文件：331.96 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe	IXYS IXYS Integrated Circuits Division	IXYS
IXFH20N80Q	文件：337.73 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH20N80Q	文件：72.52 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E	IXYS IXYS Integrated Circuits Division	IXYS
IXFK20N80Q	文件：72.52 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E	IXYS IXYS Integrated Circuits Division	IXYS
IXFK20N80Q	文件：328.98 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR20N80	文件：330.15 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR20N80P	文件：139.47 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFT20N80P	文件：331.96 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe	IXYS IXYS Integrated Circuits Division	IXYS
IXFT20N80Q	文件：72.52 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E	IXYS IXYS Integrated Circuits Division	IXYS
IXFV20N80P	文件：331.96 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe	IXYS IXYS Integrated Circuits Division	IXYS
IXFV20N80PS	文件：331.96 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe	IXYS IXYS Integrated Circuits Division	IXYS

详细参数

型号：
IXGM20N80
功能描述：
TRANSISTOR | IGBT | N-CHAN | 800V V(BR)CES | 40A I(C) | TO-204AE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	IXGM21N50		02+	TO-3	216		询价
深圳市向鸿伟业电子有限公司	IXGM25N100	IXYS	1635+	97	6000	好渠道!好价格!一片起卖!	询价
深圳市永贝尔科技有限公司	IXGM25N100	IXYS	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
中天科工半导体（深圳）有限公司	IXGM25N100	IXYS	20+	TO-3	35830	原装优势主营型号-可开原型号增税票	询价
深圳市维尔达电子有限公司	IXGM25N100	IXYS	2023+	TO-204	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
瀚佳科技(深圳)有限公司	IXGM25N100	IXYS	21+	TO-204	35210	一级代理/放心采购	询价
深圳市能元时代电子有限公司	IXGM25N100	IXYS	23+	TO-3	71437	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市科恒伟业电子有限公司	IXGM25N100A	IXYS	2016+	TO-3	6526	只做原装正品!假一赔十!只要有上一定有货的!	询价
深圳市锦喆鸿电子有限公司	IXGM25N100A	IXYS	21+	TO-3	12588	原装正品,自己库存假一罚十	询价
深圳市达恩科技有限公司	IXGM25N100A	IXYS	18	TO-2	200	进口原装正品优势供应QQ3171516190	询价

更多IXGM20N80供应商更新时间2024-5-23 15:30:00

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