Low VCE(sat), High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

文件：106.55 Kbytes 页数：4 Pages

IXYS

艾赛斯

Low V High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

文件：110.94 Kbytes 页数：4 Pages

IXYS

艾赛斯

PT 低频IGBT

Littelfuse

力特

Package：TO-204AE；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：POWER MOSFET TO-3

IXYS

艾赛斯