FDP020N06B贴片三极管技术资料参数供应价格-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IIPP020N06N	文件：337.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤2.0mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPI020N06N	文件：624.37 Kbytes Page：9 Pages	OptiMOSTMPower-Transistor Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPI020N06N	文件：1.02174 Mbytes Page：2 Pages	NewOptiMOS??40Vand60V	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPP020N06N	文件：337.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤2.0mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP020N06N	文件：618.49 Kbytes Page：9 Pages	OptiMOSTMPower-Transistor Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPP020N06N	文件：1.02174 Mbytes Page：2 Pages	NewOptiMOS??40Vand60V	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
NTMFD020N06C	文件：251.31 Kbytes Page：7 Pages	MOSFET-Power,DualN-Channel,DUALSO8FL60V,20.3m,27A	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NTMFS020N06C	文件：185.91 Kbytes Page：7 Pages	MOSFET-Power,SingleN-Channel,SO8FL60V,19.6m,28A	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NTTFS020N06C	文件：210.52 Kbytes Page：7 Pages	MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerTools,BatteryOperatedVacuum	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NTTFS020N06CTAG	文件：210.52 Kbytes Page：7 Pages	MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerTools,BatteryOperatedVacuum	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NVMFD020N06C	文件：254.21 Kbytes Page：7 Pages	MOSFET-Power,DualN-Channel,DUALSO8FL60V,20.3m,27A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWD020N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NVMFS020N06C	文件：187.41 Kbytes Page：7 Pages	MOSFET-Power,SingleN-Channel,SO-8FL60V,19.6m,28A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWS020N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NVTFS020N06C	文件：280.16 Kbytes Page：8 Pages	MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS020N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fr	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NVTFS020N06CTAG	文件：280.16 Kbytes Page：8 Pages	MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS020N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fr	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NVTFWS020N06CTAG	文件：280.16 Kbytes Page：8 Pages	MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS020N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fr	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
PRM020N06D	文件：859.03 Kbytes Page：8 Pages	60VSingleN-ChannelMOSFET	PFC PFC Device Inc.	PFC
PRM020N06E	文件：862.06 Kbytes Page：8 Pages	60VSingleN-ChannelMOSFET	PFC PFC Device Inc.	PFC
RHP020N06	文件：228.01 Kbytes Page：5 Pages	4VDriveNchMOSFET	ROHMRohm 罗姆罗姆半导体集团	ROHM
RHP020N06	文件：65.51 Kbytes Page：3 Pages	4VDriveNchMOSFET Features 1)LowOn-resistance. 2)Highspeedswitching. 3)WideSOA. Applications Switching	ROHMRohm 罗姆罗姆半导体集团	ROHM
RHP020N06	文件：160.69 Kbytes Page：5 Pages	4VDriveNchMOSFET Features 1)LowOn-resistance. 2)Highspeedswitching. 3)WideSOA. Applications Switching	ROHMRohm 罗姆罗姆半导体集团	ROHM

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	FDP020N06B贴片三极管	FAIRCHILD/仙童	23+	TO-220	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	FDP020N06B贴片三极管	FAIRCHILD/仙童	2022	TO-220	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市云美电子科技有限公司	FDP020N06B贴片三极管	FAIRCHILD/仙童	22+	NA	34137	只做原装进口现货	询价
深圳市河锋鑫科技有限公司	FDP023003	IR	22+	145	6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	FDP023003	IR	23+	145	8000	只做原装现货	询价
天津市博通航睿技术有限公司	FDP023003	IR	23+	145	7000		询价
深圳市科恒伟业电子有限公司	FDP023601-20	PHILIPS/飞利浦	1948+	SOT23-3	6852	只做原装正品现货!或订货假一赔十!	询价
深圳宇航军工半导体有限公司	FDP023N08B	FSC	19+	TO-220	71045	原厂代理渠道,每一颗芯片都可追溯原厂；	询价
深圳市华来深电子有限公司	FDP023N08B	FAIRCHI	23+	TO-220	8560	受权代理!全新原装现货特价热卖!	询价
深圳市正迈科技有限公司	FDP023N08B	FSC/ON	23+	原包装原封□□	11000	原装进口特价供应QQ1304306553更多详细咨询库存	询价

更多FDP020N06B贴片三极管供应商更新时间2024-11-10 11:00:00

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