MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：187.41 Kbytes 页数：7 Pages

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安森美半导体

丝印：20N06C；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：187.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power, Single, N-Channel, SO-8FL, 60 V, 19.6 mΩ, 28 A

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Industry Standard Small Footprint (5x6 mm) Package\n• Compact Design and Standard footprint for direct drop-in\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Gate capacitance\n• Minimize Switching Losses\n• NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection\n• Enhanc;

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr

文件：280.16 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr

文件：280.16 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr

文件：280.16 Kbytes 页数：8 Pages

ONSEMI

安森美半导体