丝印：FDS6685；Package：SOP-8；-30V P-Channel MOSFET

Features Low gate charge (17nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability (VGS = 10V) VDS (V) = - 30V ID = -8.8 A R DS(ON)

文件：369.31 Kbytes 页数：6 Pages

UMW

友台半导体

P-Channel Logic Level PowerTrenchTM MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batte

文件：204.12 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

P 沟道 PowerTrench® MOSFET -30V，-8.8A，20mΩ

此P沟道MOSFET是采用飞兆半导体先进的PowerTrench工艺生产的稳固栅极版本。 它已针对需要大范围栅极驱动电压额定值(4.5V – 25V)的电源管理应用进行了优化。 • –8.8 A, –30 VRDS(ON) = 20 mΩ @ VGS = –10 VRDS(ON) = 35 mΩ @ VGS = –4.5 V\n• Low gate charge (17nC typical)\n• Fast switching speed\n• High performance trench technology for extremely low RDS(ON)\n• High power and current handling capability;

ONSEMI

安森美半导体

30V P-Channel PowerTrench MOSFET

文件：65.9 Kbytes 页数：2 Pages

KEXIN

科信电子

Dual-Output Remote-Junction Temperature Switches

文件：108.79 Kbytes 页数：7 Pages

MAXIM

美信

8,388,608-Word x 1-Bit Serial Register

GENERAL DESCRIPTION The MSM6685 is a serial register composed of 8,388,608 words x one bit, characterized by medium speed, low power consumption operation. This device has a built-in internal address generation circuit allowing continuous serial read/write operation by external clock input. Read

文件：84.65 Kbytes 页数：9 Pages

OKIOki Electric Cable Co.,Ltd

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