FDS6912A

Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

GeneralDescription TheseN-ChannelLogicLevelMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltagea

FDS6912A

丝印：FDS6912A；Package：SOP-8；30V Dual N-Channel MOSFET

Features •Fastswitchingspeed •Lowgatecharge •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=6A RDS(ON)

FDS6912A

丝印：FDS6912A；Package：SO-8；Dual N-Channel Logic Level PowerTrenchÒ MOSFET

GeneralDescription TheseN-ChannelLogicLevelMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltagea

FDS6912A

双 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，6A，28mΩ; •6 A，30 V\n•RDS(ON) = 28 mΩ @ VGS = 10 V\n•RDS(ON) = 35 mΩ @ VGS = 4.5 V\n•快速开关速度\n•低栅极电荷\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力\n;

这些N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。

FDS6912A

Dual N-Channel Logic Level PowerTrench MOSFET

FDS6912A_03

Dual N-Channel Logic Level PowerTrench MOSFET