MOSFET- Power, Single N-Channel, SO8FL 60 V, 19.6 m, 28 A

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丝印：20N06C；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO8FL 60 V, 19.6 m, 28 A

文件：185.91 Kbytes 页数：7 Pages

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Power MOSFET Power, N-Channel, SINGLE SO8FL, 60 V, 19.6 mΩ, 28 A

Industrial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. • Industry Standard Small Footprint (5x6 mm) Package\n• Compact Design and Standard footprint for direct drop-in\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Gate capacitance\n• Minimize Switching Losses\n• These devices are Pb-Free and are RoHS Compliant;

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MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuum

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MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuum

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MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

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安森美半导体