MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

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丝印：20DN6C；Package：SO8FLDual；MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

文件：251.31 Kbytes 页数：7 Pages

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Power MOSFET Power, N-Channel, DUAL SO8FL, 60 V, 20.3 mΩ, 27 A

Industrial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. • Small Footprint (5x6 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• These Devices are Pb-Free and are RoHS Compliant;

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MOSFET- Power, Single N-Channel, SO8FL 60 V, 19.6 m, 28 A

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MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuum

文件：210.52 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuum

文件：210.52 Kbytes 页数：7 Pages

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安森美半导体