丝印：CSD19531KCS；Package：TO-220；CSD19531KCS 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap telecom • Motor control 3 Description This 100V, 6.4m

文件：1.21399 Mbytes 页数：14 Pages

TI

德州仪器

SURFACE MOUNT DRUM CORE INDUCTOR

文件：16.12 Kbytes 页数：1 Pages

RHOMBUS-IND

CSD19531KCS 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap telecom • Motor control 3 Description This 100V, 6.4m

文件：1.21399 Mbytes 页数：14 Pages

TI

德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：321.58 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Channel NexFE Power MOSFETs

文件：838.5 Kbytes 页数：7 Pages

TI

德州仪器