丝印：CSD19533KCS；Package：TO-220；CSD19533KCS, 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 100V, 8.7mΩ, TO-220 NexFET™ powe

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TI

德州仪器

SURFACE MOUNT DRUM CORE INDUCTOR

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RHOMBUS-IND

Customer SpecificationS

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (26/30) AWG BC 0.060 b) Insulation 0.032 Wall, Nom. EPDM Rubber 0.123 (1) Separator Paper Tape, 10 Overlap, Min. (2) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 3 GREEN 2) Cable Assembly 3 Components Cable

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ALPHAWIREAlpha Wire

阿尔法电线

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (65/34) AWG BC 0.059 b) Insulation 0.032 Wall, Nom. PVC 0.123 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 3 GREEN/YELLOW 2) Cable Assembly 3 Components Cabled a) Twists: 4.8 Twists/foot (min) 3) Jack

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ALPHAWIREAlpha Wire

阿尔法电线

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

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ISC

无锡固电