丝印：CSD19536KTT；Package：TO-263；CSD19536KTT 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap • Motor control 3 Description This 100V, 2mΩ, D2PAK (T

文件：784.56 Kbytes 页数：16 Pages

TI

德州仪器

SURFACE MOUNT DRUM CORE INDUCTOR

文件：16.12 Kbytes 页数：1 Pages

RHOMBUS-IND

CSD19536KCS, 100 V N-Channel NexFET Power MOSFET

文件：467 Kbytes 页数：10 Pages

TI

德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 150A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：321.73 Kbytes 页数：2 Pages

ISC

无锡固电

CSD19536KCS 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-Free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 100V, 2.3mΩ, TO-220 NexFET™ powe

文件：991.7 Kbytes 页数：13 Pages

TI

德州仪器