CSD19533KCS

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

CSD19533KCS

100 V N-Channel NexFET Power MOSFETs

19533

CustomerSpecificationS

Construction Diameters(In) 1)Component13X1COND a)Conductor16(26/30)AWGBC0.060 b)Insulation0.032Wall,Nom.EPDMRubber0.123 (1)SeparatorPaperTape,10Overlap,Min. (2)Color(s) CondColorCondColorCondColor 1BLACK2WHITE3GREEN 2)CableAssembly3ComponentsCable

19533T

CustomerSpecification

Construction Diameters(In) 1)Component13X1COND a)Conductor16(65/34)AWGBC0.059 b)Insulation0.032Wall,Nom.PVC0.123 (1)Color(s) CondColorCondColorCondColor 1BLACK2WHITE3 GREEN/YELLOW 2)CableAssembly3ComponentsCabled a)Twists:4.8Twists/foot(min) 3)Jack

L-19533

SURFACEMOUNTDRUMCOREINDUCTOR