首页 >BSC100N03MSGXT/BKN>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
90A竊?0VN-CHANNELMOSFET | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 | KIA | ||
30VN-ChannelPower Features VDS=30V,ID=90A RDS(ON),3.8mΩ(Typ)@VGS=10V RDS(ON),6.4mΩ(Typ)@VGS=4.5V Lowonresistance Lowgatecharge Fastswitching Lowreversetransfercapacitances | UMWUMW 友台友台半导体 | UMW | ||
N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNELMOSFETinaTO-220PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
OptiMOS??Power-MOSFET Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel;Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avalanc | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
30V-ChannelMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
30V-ChannelMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
30V-ChannelMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelEnhancementModePowerMOSFET | HUILIDAShenzhen hui lida electronic co., LTD 汇利达广东汇利达半导体有限公司 | HUILIDA | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
HighdensitycelldesignforultralowRdson | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■TrenchMOS™technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompatible ■Surfacemountpackage. Applications ■DCtoDCconverters ■ | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Switching(30V,10A) Features 1)LowQg. 2)Lowon-resistance. 3)Exellentresistancetodamagefromstaticelectric Structure SiliconN-channel MOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
8000 |
只做原装现货 |
询价 | |||
INFINEON/英飞凌 |
23+ |
DFN-85X6 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON/英飞凌 |
22+ |
DFN-85X6 |
3750 |
原装现货假一赔十 |
询价 | ||
INFINEON/英飞凌 |
2022 |
DFN-85X6 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
INFINEON/英飞凌 |
21+ |
QFN8 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
INFINEON/英飞凌 |
NA |
275000 |
一级代理原装正品,价格优势,长期供应! |
询价 | |||
INFINEON/英飞凌 |
22+ |
SuperSO8 |
17506 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
INFINEON/英飞凌 |
22+ |
SuperSO8 |
17506 |
询价 | |||
INFINEON/英飞凌 |
22+ |
DFN8 |
34137 |
只做原装进口现货 |
询价 | ||
23+ |
N/A |
45780 |
正品授权货源可靠 |
询价 |
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