丝印：100N03A；Package：TO-252；30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

文件：910.69 Kbytes 页数：6 Pages

UMW

友台半导体

90A竊?0V N-CHANNEL MOSFET

文件：212.13 Kbytes 页数：5 Pages

KIA

可易亚半导体

30V 120A 2.8mΩ N-Channel Trench Power MOSFET

ShangjiaSemi

商甲半导体

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

文件：240.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：884.73 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

文件：390.79 Kbytes 页数：10 Pages

INFINEON

英飞凌