HM100N03D

Marking：HM100N03D；Package：DFN5X6-8L；High density cell design for ultra low Rdson

PHB100N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

PHB100N03LT

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■TrenchMOS™technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompatible ■Surfacemountpackage. Applications ■DCtoDCconverters ■

RES100N03

Switching(30V,10A)

Features 1)LowQg. 2)Lowon-resistance. 3)Exellentresistancetodamagefromstaticelectric Structure SiliconN-channel MOSFET

RRS100N03-TB

N-Channel20V(D-S)MOSFET

RSH100N03

4VDriveNchMOSFET

4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(SOP8). Application Powerswitching,DC/DCconverter.

RSS100N03

Switching(30V,짹10A)

Switching(30V,±10A) Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallandSurfaceMountPackage(SOP8). Applications Powerswitching,DC/DCconverter.

RSS100N03FRA

Nch30V10APowerMOSFET

RSS100N03HZG

Nch30V10APowerMOSFET

RSS100N03TB

N-Channel650V(D-S)MOSFET