N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Low on-state resistance ■ Avalanche ruggedness rated ■ Logic level compatible ■ Surface mount package. Applications ■ DC to DC converters ■

文件：331.22 Kbytes 页数：13 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) =5.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.48 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel enhancement mode field-effect transistor

恩XP

Switching (30V, 10A)

Features 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electric Structure Silicon N-channel MOS FET

文件：44.16 Kbytes 页数：4 Pages

ROHM

罗姆

Switching (30V, 짹10A)

Switching (30V, ±10A) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Applications Power switching, DC/DC converter.

文件：59.93 Kbytes 页数：4 Pages

ROHM

罗姆

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

文件：240.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体