N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHB160N03T in SOT404 (D2-PAK). Features ■ TrenchMOS™ technology ■ Very low on-state resistance. Applications ■ DC to DC converters ■ Switched-mode po

文件：271.6 Kbytes 页数：13 Pages

PHI

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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N-channel enhancement mode field-effect transistor

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N-Channel Enhancement Mode Field Effect Transistor

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