PHB160N03T中文资料下载贸易商无锡固电ISC-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
PHB160N03T	文件：271.6 Kbytes Page：13 Pages	N-channel enhancement mode field-effect transistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHB160N03TinSOT404(D2-PAK). Features ■TrenchMOS™technology ■Verylowon-stateresistance. Applications ■DCtoDCconverters ■Switched-modepo	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
PHB160N03T	文件：344.61 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
ADM160N03D	文件：640.64 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor	ADVAdvanced (Shenzhen) Electronics Co.,Ltd 爱德微爱德微(深圳)电子有限公司	ADV
ADM160N03E	文件：664.63 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor	ADVAdvanced (Shenzhen) Electronics Co.,Ltd 爱德微爱德微(深圳)电子有限公司	ADV
PHB160N03LT	文件：1.13478 Mbytes Page：10 Pages	N-Channel30V(D-S)175째CMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI

更多PHB160N03T供应商更新时间2025-7-14 11:05:00