isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 27A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

TrenchMOS standard level FET

文件：262.93 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

文件：189.41 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • High noise immunity due to high gate threshold voltage\n• Low conduction losses due to low on-state resistance;

Nexperia

安世