N-Channel Enhancement Mode Field Effect Transistor

文件：664.63 Kbytes 页数：6 Pages

ADV

爱德微

MOSFET

ADV

爱德微

N-Channel 30 V (D-S) 175 째C MOSFET

文件：1.13478 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：344.61 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHB160N03T in SOT404 (D2-PAK). Features ■ TrenchMOS™ technology ■ Very low on-state resistance. Applications ■ DC to DC converters ■ Switched-mode po

文件：271.6 Kbytes 页数：13 Pages

PHI

飞利浦