PHB20NQ20T

N-channel TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP20NQ20TissuppliedintheS

PHB20NQ20T

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits H

PHB20NQ20T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHB20NQ20T

N-channel TrenchMOS™ transistor; • ’Trench’ technology\n• Very low on-state resistance\n• Fast switching\n• Low thermal resistance;

GENERAL DESCRIPTION\nN-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.\nThe PHP20NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package.\nThe PHB20NQ20T is supplied in the SOT404 (D2PAK) surface mounting package.FEATURES\n• ’Trench’ technology\n• Very low on-state resistance\n• Fast switching\n• Low thermal resistance

PHB20NQ20T

N-channel TrenchMOS standard level FET;

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.\n

PHB20NQ20T_15

N-channel TrenchMOS standard level FET