零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
PHB20N06T | N-channel TrenchMOS transistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■Verylowon-stateresistance ■Fastswitching. Applications ■Switchedmodepowersupplies ■DCtoDCconverters. | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | |
PHB20N06T | N-channel TrenchMOS standard level FET Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconduc | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | |
PHB20N06T | N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | |
PHB20N06T | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-channelTrenchMOSstandardlevelFET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=77mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel60-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channelTrenchMOSstandardlevelFET Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconduc | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channelTrenchMOStransistor Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Features ■TrenchMOS™technology ■Lowon-stateresistance ■Fastswitching. Applications ■Switchedmodepowersupplies ■DCtoDCconverters ■Generalpurposeswitch. | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■Verylowon-stateresistance ■Fastswitching. Applications ■Switchedmodepowersupplies ■DCtoDCconverters. | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
详细参数
- 型号:
PHB20N06T
- 制造商:
PHILIPS
- 制造商全称:
NXP Semiconductors
- 功能描述:
N-channel TrenchMOS standard level FET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PHILIPS/飞利浦 |
24+ |
TO-263 |
20000 |
只做原厂渠道 可追溯货源 |
询价 | ||
PH |
24+ |
SOT404TO-263D2PAK |
8866 |
询价 | |||
NXP |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
PHNXP |
20+ |
SOT404TO-263D2PAK |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
NXP |
24+ |
TO-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
PHILIPS |
08+ |
TO-263 |
20000 |
普通 |
询价 | ||
NXP/恩智浦 |
22+ |
SOT-263 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
NXP US |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
NXP/恩智浦 |
23+ |
TO-263 |
3500 |
原装正品假一罚百!可开增票! |
询价 | ||
PHNXP |
23+ |
SOT404TO-263D2PAK |
50000 |
全新原装正品现货,支持订货 |
询价 |
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