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PHB21N06T

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHB21N06T

N-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

PHD21N06LT

N-channelTrenchMOSÔtransistorLogiclevelFET

FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHD21N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHD21N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHD21N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHP21N06

TrenchMOSOtransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconverters

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHP21N06

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHP21N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHP21N06LT

N-channelTrenchMOSÔtransistorLogiclevelFET

FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    PHB21N06T

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 21A I(D) | SOT-404

供应商型号品牌批号封装库存备注价格
恩XP
24+
TO-263
504479
免费送样原盒原包现货一手渠道联系
询价
PH
24+
TO-263
2265
询价
恩XP
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
恩XP
1822+
TO-263
9852
只做原装正品假一赔十为客户做到零风险!!
询价
恩XP
18+
TO-263
41200
原装正品,现货特价
询价
PHI
2022+
SOT404(D2PAK)
6905
原厂代理 终端免费提供样品
询价
PHI
23+
TO-263
125800
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
N
23+
SOT404
6000
原装正品,支持实单
询价
PHI
2022+
SOT404(D2PAK)
48000
只做原装,原装,假一罚十
询价
N
25+
SOT404
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多PHB21N06T供应商 更新时间2025-5-29 17:06:00