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PHD21N06LT

N-channel TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHD21N06LT

TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHD21N06LT

N-channel TrenchMOSÔ transistor Logic level FET

FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHB21N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHB21N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHB21N06LT

N-channelTrenchMOSÔtransistorLogiclevelFET

FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHB21N06T

N-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

PHB21N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHP21N06

TrenchMOSOtransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconverters

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHP21N06

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHP21N06LT

N-channelTrenchMOSÔtransistorLogiclevelFET

FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHP21N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHP21N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHP21N06T

TrenchMOSOtransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconverters

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

STP21N06L

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.065Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■LOGICLEVELCOMPATIBLEINPUT ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP21N06LFI

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.065Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■LOGICLEVELCOMPATIBLEINPUT ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    PHD21N06LT

  • 制造商:

    PHILIPS

  • 制造商全称:

    NXP Semiconductors

  • 功能描述:

    TrenchMOS transistor Logic level FET

供应商型号品牌批号封装库存备注价格
NXP
20+
TO-252
2500
全新原装,价格优势
询价
PHILIPS/飞利浦
2024+实力库存
TO-252
20000
只做原厂渠道 可追溯货源
询价
PHNXP
17+
SOT428TO-252
31518
原装正品 可含税交易
询价
NXP
2017+
TO252
23589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
PH
08+(pbfree)
SOT428TO-252
8866
询价
NXP
2015+
SMD
19998
专业代理原装现货,特价热卖!
询价
PHILIPS/NXP
360000
原厂原装
1305
询价
PHILIPS
17+
TO-252
6200
询价
NXP
16+
NA
8800
诚信经营
询价
NXP
2016+
TO-252
6551
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多PHD21N06LT供应商 更新时间2024-5-17 14:04:00