N-channel TrenchMOS transistor

VDSS = 150 V ID = 23 A RDS(ON) ≤ 90 mΩ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switchin

文件：99.04 Kbytes 页数：9 Pages

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PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：344.95 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS™ transistor

VDSS = 150 V\nID = 23 A\nRDS(ON) ≤ 90 mΩGENERAL DESCRIPTION\nN-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications • ’Trench’ technology\n• Low on-state resistance\n• Fast switching\n• Low thermal resistance;

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.15 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor

VDSS = 150 V ID = 23 A RDS(ON) ≤ 90 mΩ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switchin

文件：99.04 Kbytes 页数：9 Pages

PHI

PHI