TrenchMOS logic level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP108NQ03LT in SOT78 (TO-220AB) PHB108NQ03LT in SOT404 (D2-PAK) PHD108NQ03LT in SOT428 (D-PAK). Features ■Logic level compatible ■

文件：269.45 Kbytes 页数：14 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. Features ■Logic level threshold ■Very low on-state resistance ■Lead-free construction ■Low gate charge Applications ■DC-to-DC conve

文件：108.63 Kbytes 页数：14 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·Switch-mode Power Supplies ·Power Motor Control

文件：345.15 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS™ logic level FET

General description\nLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. ■Logic level threshold\n■Very low on-state resistance\n■Lead-free construction\n■Low gate chargeApplications\n■DC-to-DC converter\n■Switch-mode power supplies;

恩XP

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世