PHB21N06LTT/R资料使用说明书供应价格-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
PHB21N06LT	文件：112.45 Kbytes Page：11 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHB21N06LT	文件：82.44 Kbytes Page：10 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHB21N06LT	文件：233.59 Kbytes Page：12 Pages	N-channelTrenchMOSÔtransistorLogiclevelFET FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PHB21N06T	文件：1.32097 Mbytes Page：9 Pages	N-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
PHB21N06T	文件：69.23 Kbytes Page：8 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD21N06LT	文件：112.45 Kbytes Page：11 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD21N06LT	文件：82.44 Kbytes Page：10 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD21N06LT	文件：233.59 Kbytes Page：12 Pages	N-channelTrenchMOSÔtransistorLogiclevelFET FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PHP21N06	文件：112.45 Kbytes Page：11 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHP21N06	文件：65.06 Kbytes Page：8 Pages	TrenchMOSOtransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconverters	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHP21N06LT	文件：112.45 Kbytes Page：11 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHP21N06LT	文件：233.59 Kbytes Page：12 Pages	N-channelTrenchMOSÔtransistorLogiclevelFET FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PHP21N06LT	文件：82.44 Kbytes Page：10 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHP21N06T	文件：65.06 Kbytes Page：8 Pages	TrenchMOSOtransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconverters	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
STP21N06L	文件：197.53 Kbytes Page：10 Pages	N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.065Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■LOGICLEVELCOMPATIBLEINPUT ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARA	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP21N06LFI	文件：197.53 Kbytes Page：10 Pages	N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.065Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■LOGICLEVELCOMPATIBLEINPUT ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARA	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS

详细参数

型号：
PHB21N06LTT/R
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 21A I(D) | SOT-404

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市维尔达电子有限公司	PHB21N06LTT/R	PHILIPS	2023+		80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市威尔健半导体有限公司	PHB21N06LT低压MOS管	VBSEMI/台湾微碧	23+	TO263	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	PHB21N06LT其他被动元件	NXP/恩智浦	2022	TO-263	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市科恒伟业电子有限公司	PHB21N06LT其他被动元件	PHILIPS/飞利浦	21+		9852	只做原装正品现货!或订货假一赔十!	询价
深圳市吉利鑫科技发展有限公司	PHB21N06LT其他被动元件	NXP/恩智浦	2022+	TO-263	79999		询价
深圳市华芯源电子有限公司	PHB21N06LT其他被动元件	NXP/恩智浦	22+	D2PAK	14173	终端免费提供样品可开13%增值税发票	询价
深圳和润天下电子科技有限公司	PHB21N06LT其他被动元件	NXP/恩智浦	22+	D2PAK	14173		询价
深圳市特顺芯科技有限公司	PHB21N06T	PH	05+	TO-263	2265		询价
深圳市华来深电子有限公司	PHB21N06T	NXP	23+	TO-263	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市百视威讯电子科技有限公司	PHB21N06T		23+	N/A	30050	正品授权货源可靠	询价

更多PHB21N06LTT/R供应商更新时间2024-5-14 17:33:00

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