PHB47NQ10T

N-channel enhancement mode field-effect transistor

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Features ■Fastswitching ■Verylowon-stateresistance. Applications ■DCtoDCconverters ■Switchedmodepowersupplies.

PHB47NQ10T

N-channel TrenchMOS standard level FET

Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconduc

PHB47NQ10T

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L

PHB47NQ10T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=47A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHP47NQ10T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=47A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHP47NQ10T

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Features ■Fastswitching ■Verylowon-stateresistance. Applications ■DCtoDCconverters ■Switchedmodepowersupplies.