Switching (30V, 10A)

Features 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electric Structure Silicon N-channel MOS FET

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Switching (30V, 10A) / Transistors

1) Low Qg.\n2) Low on-resistance.\n3) Exellent resistance to damage from static electric\n\nStructure\nSilicon N-channel\nMOS FET;

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N-Channel 20V (D-S) MOSFET

文件：1.00656 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

4V Drive Nch MOSFET

4V Drive Nch MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter.

文件：173.81 Kbytes 页数：4 Pages

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Switching (30V, 짹10A)

Switching (30V, ±10A) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Applications Power switching, DC/DC converter.

文件：59.93 Kbytes 页数：4 Pages

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