TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP130N03LT is supp

文件：51.49 Kbytes 页数：6 Pages

PHI

飞利浦

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP130N03LT is supp

文件：63.36 Kbytes 页数：8 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：344.87 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS transistor Logic level FET

恩XP