P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a surface-mounted device in line current interruptor in telephone sets and for application in relay, high speed and line transformer drivers. FEATURES • Low threshold voltage VGS(th) • Di

文件：52.04 Kbytes 页数：8 Pages

PHI

PHI

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V

文件：97.22 Kbytes 页数：8 Pages

SIEMENS

西门子

SIPMOS Small-Signal-Transistor

Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant

文件：78.13 Kbytes 页数：8 Pages

INFINEON

英飞凌

SIPMOS Small-Signal-Transistor

文件：766.12 Kbytes 页数：8 Pages

INFINEON

英飞凌

SIPMOS Small-Signal-Transistor

文件：766.12 Kbytes 页数：8 Pages

INFINEON

英飞凌

P-channel enhancement mode vertical D-MOS transistor

恩XP

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

Infineon

英飞凌

20V-250V P-Channel Power MOSFET

英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。 • 增强模式\n• 雪崩评级\n• 无铅镀层；符合 RoHS\n• 小信号封装，经 AEC Q101 认证\n\n优势:;

Infineon

英飞凌