丝印：M8-；Package：SOT-23；N-channel enhancement mode vertical D-MOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■

文件：101.24 Kbytes 页数：8 Pages

PHI

飞利浦

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Sw

文件：122.19 Kbytes 页数：6 Pages

DIODES

美台半导体

N-Channel MOSFET

Features ● TrenchMOS™ technology ● Very fast switching ● Logic level compatible ● Subminiature surface mount package.

文件：1.33762 Mbytes 页数：5 Pages

KEXIN

科信电子

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

文件：1.73224 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET

文件：748.01 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applicati

文件：417.23 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel enhancement mode vertical D-MOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■

文件：101.24 Kbytes 页数：8 Pages

PHI

飞利浦

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■

文件：339.29 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

文件：50.43 Kbytes 页数：8 Pages

PHI

飞利浦

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

文件：50.43 Kbytes 页数：8 Pages

PHI

飞利浦