丝印：M8-；Package：SOT-363；60 V, 320 mA N-channel Trench MOSFET

General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ● Logic-level compatible ● Very fast switching ● Trench MOSFET technology ● AEC-

文件：382.95 Kbytes 页数：16 Pages

恩XP

丝印：M8-；Package：SOT-23；N-channel enhancement mode vertical D-MOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSN20 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■

文件：101.24 Kbytes 页数：8 Pages

PHI

PHI

DOUBLE-BALANCED MIXERS

文件：177.99 Kbytes 页数：2 Pages

MARKIMICROWAVE

DOUBLE-BALANCED MIXERS

文件：149.66 Kbytes 页数：2 Pages

MARKIMICROWAVE

DOUBLE-BALANCED MIXERS

文件：198.15 Kbytes 页数：2 Pages

MARKIMICROWAVE

UNLESS OTHERWISE SPECIFIED: DIMENSIONS ARE IN MM (MILLIMETERS). SURFACE FINISH: TOLERANCES: DIN 6923

文件：43.39 Kbytes 页数：1 Pages

TRFASTENINGS

Short Barrel Inductive Prox

文件：270.39 Kbytes 页数：5 Pages

OMRON

欧姆龙