丝印：M8-；Package：SOT-363；60 V, 320 mA N-channel Trench MOSFET

General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ● Logic-level compatible ● Very fast switching ● Trench MOSFET technology ● AEC-

文件：382.95 Kbytes 页数：16 Pages

恩XP

丝印：M8；Package：TSSOP6；60 V, 320 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

文件：294.36 Kbytes 页数：15 Pages

NEXPERIA

安世

60 V, 320 mA N-channel Trench MOSFET

General description\nDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Features and benefits\n● Logic-level compatible\n● Very fast switching\n● Trench MOSFET technology\n● AEC-Q101

恩XP

N-Channel Enhancement Mode Field Effect Transistor - 0.25Amp 60Volt

□ Feature - Small surface mounting type - High density cell design for low RDS(ON) - Suitable for high packing density - Rugged and reliable - High saturation current capability - Voltage controlled small signal switch □ Application - Servomotor control - Power MOSFET gate drivers - Othe

文件：184.33 Kbytes 页数：5 Pages

SIRECT

矽莱克半导体

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 Ampere FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Servo

文件：191.36 Kbytes 页数：5 Pages

CHENMKO

力勤