2N7002PS

Marking：M8；Package：TSSOP6；60 V, 320 mA dual N-channel Trench MOSFET

1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnolog

7UL1G86FU

Marking：M8；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription •2-InputExclusive-ORGate Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Highoutputcurrent:±8.0mA(min)atVCC=3.0V (3)Superhighspeedoperation:tpd=2.5ns(typ.)atVCC=3.3V,CL=15pF (4)Operatingvoltagerange:VCC=0.9t

AP22818AM8-13

Marking：M8；Package：MSOP-8；1.0A/1.5A/2.0A SINGLE CHANNEL POWER DISTRIBUTION LOAD SWITCH

Features -InputVoltageRange:2.7Vto5.5V -75mΩOn-resistance -Built-inSoft-startwith0.6msTypicalRiseTime -FaultReport(FLG)withBlankingTime(6msTyp.) -ESDProtection:2kVHBM,500VCDM -LogicLevelEnablePin:AvailablewithActive-highorActive-lowVersions -Protectio

AP22818BM8-13

Marking：M8；Package：MSOP-8；1.0A/1.5A/2.0A SINGLE CHANNEL POWER DISTRIBUTION LOAD SWITCH

Features -InputVoltageRange:2.7Vto5.5V -75mΩOn-resistance -Built-inSoft-startwith0.6msTypicalRiseTime -FaultReport(FLG)withBlankingTime(6msTyp.) -ESDProtection:2kVHBM,500VCDM -LogicLevelEnablePin:AvailablewithActive-highorActive-lowVersions -Protectio

AP2301AM8-13

Marking：M8；Package：MSOP-8；2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH

Features -SingleChannelCurrent-LimitedPowerSwitch -OutputDischargeFunction -FastShort-CircuitResponseTime:2μs -2.5AAccurateCurrentLimiting -ReverseCurrentBlocking -70mΩon-Resistance -InputVoltageRange:2.7Vto5.5V -Built-inSoft-Startwith0.6msTypicalRiseTime

AP2311AM8-13

Marking：M8；Package：MSOP-8；2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH

Features -SingleChannelCurrent-LimitedPowerSwitch -OutputDischargeFunction -FastShort-CircuitResponseTime:2μs -2.5AAccurateCurrentLimiting -ReverseCurrentBlocking -70mΩon-Resistance -InputVoltageRange:2.7Vto5.5V -Built-inSoft-Startwith0.6msTypicalRiseTime

BAS16LS

Marking：M8；Package：SOD882BD；High-speed switching diode

Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowleakagecurrent •RepetitivepeakreversevoltageVRRM≤100V •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •Lowcapacitance •ReversevoltageVR≤100V •UltrasmallandleadlessSMDplasticpackage

BAS16LS-Q

Marking：M8；Package：DFN1006BD-2；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaleadlessultrasmallDFN1006BD-2(SOD882BD) Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowleakagecurrent •Repetitivepeakrever

BZX384-B27

Marking：M8；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

BZX384-B27

Marking：M8；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-powervoltageregulatordiodesencapsulatedinaverysmallSOD323(SC-76)plasticSMDpackage. ThediodesareavailableinthenormalizedE24±2(BZX384-B)andapprox.±5(BZX384-C)tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V.