丝印：M8；Package：TSSOP6；60 V, 320 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

文件：294.36 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：M8；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input Exclusive-OR Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operating voltage range: VCC = 0.9 t

文件：175 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M8；Package：MSOP-8；1.0A/1.5A/2.0A SINGLE CHANNEL POWER DISTRIBUTION LOAD SWITCH

Features - Input Voltage Range: 2.7V to 5.5V - 75mΩ On-resistance - Built-in Soft-start with 0.6ms Typical Rise Time - Fault Report (FLG) with Blanking Time (6ms Typ.) - ESD Protection: 2kV HBM, 500V CDM - Logic Level Enable Pin: Available with Active-high or Active-low Versions - Protectio

文件：1.32771 Mbytes 页数：17 Pages

DIODES

美台半导体

丝印：M8；Package：MSOP-8；1.0A/1.5A/2.0A SINGLE CHANNEL POWER DISTRIBUTION LOAD SWITCH

Features - Input Voltage Range: 2.7V to 5.5V - 75mΩ On-resistance - Built-in Soft-start with 0.6ms Typical Rise Time - Fault Report (FLG) with Blanking Time (6ms Typ.) - ESD Protection: 2kV HBM, 500V CDM - Logic Level Enable Pin: Available with Active-high or Active-low Versions - Protectio

文件：1.32771 Mbytes 页数：17 Pages

DIODES

美台半导体

丝印：M8；Package：MSOP-8；2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH

Features - Single Channel Current-Limited Power Switch - Output Discharge Function - Fast Short-Circuit Response Time: 2μs - 2.5A Accurate Current Limiting - Reverse Current Blocking - 70mΩ on-Resistance - Input Voltage Range: 2.7V to 5.5V - Built-in Soft-Start with 0.6ms Typical Rise Time

文件：656.61 Kbytes 页数：17 Pages

DIODES

美台半导体

丝印：M8；Package：MSOP-8；2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH

Features - Single Channel Current-Limited Power Switch - Output Discharge Function - Fast Short-Circuit Response Time: 2μs - 2.5A Accurate Current Limiting - Reverse Current Blocking - 70mΩ on-Resistance - Input Voltage Range: 2.7V to 5.5V - Built-in Soft-Start with 0.6ms Typical Rise Time

文件：656.61 Kbytes 页数：17 Pages

DIODES

美台半导体

丝印：M8；Package：SOD882BD；High-speed switching diode

Features and benefits • High switching speed: trr ≤ 4 ns • Low leakage current • Repetitive peak reverse voltage VRRM ≤ 100 V • Suitable for Automatic Optical Inspection (AOI) of solder joint • Low capacitance • Reverse voltage VR ≤ 100 V • Ultra small and leadless SMD plastic package

文件：280.31 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：M8；Package：DFN1006BD-2；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low leakage current • Repetitive peak rever

文件：227.95 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：M8；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：320.93 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：M8；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：690.77 Kbytes 页数：11 Pages

恩XP