ADM4850ARMZ-REEL7

Marking：M8Q；Package：MSOP；5 V, Slew Rate Limited, Half-Duplex and Full Duplex RS-485/RS-422 Transceivers

FEATURES Electronicsindustriesalliance(EIA)RS-485/RS-422compliant Datarateoptions ADM4850/ADM4854:115kbps ADM4851/ADM4855:500kbps ADM4852/ADM4856:2.5Mbps ADM4853/ADM4857:10Mbps Half-duplexandfullduplexoptions Reducedslewratesforlowelectromagneticinterference(EMI)

ADM80N03Z

Marking：M80N03Z；Package：PDFN33；N-Channel Enhancement Mode Field Effect Transistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●GreenDeviceAvailable Description: TheADM80N03ZusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withl

BSN20

Marking：M8-；Package：SOT-23；N-channel enhancement mode vertical D-MOS transistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: BSN20inSOT23. Features ■TrenchMOS™technology ■Veryfastswitching ■Logiclevelcompatible ■Subminiaturesurfacemountpackage. Applications ■

DM8W27Q-13

Marking：M8W27；Package：DO-218；6600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Features 6600WPeakPulsePowerDissipation HighCurrentCapability GlassPassivatedDieConstruction LowReverseCurrent LowThermalResistance LowPowerLossandHighEfficiency ExcellentHighTemperatureStability MeetsISO7637-2SurgeCapability MeetsISO16750-2Surg

DM8WxxA-13

Marking：M8WxxA；Package：DO-218；6600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Features 6600WPeakPulsePowerDissipation TJ=+175°CCapabilitySuitableforHighReliability AvailableinUnidirectionalPolarityOnly HighCurrentCapability ExcellentHigh-TemperatureStability MeetsISO7637-2SurgeCapability MeetsISO16750-2SurgeSpecification Lead

DM8WxxAQ-13

Marking：M8WxxA；Package：DO-218；6600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Features •6600WPeakPulsePowerDissipation •TJ=+175°CCapabilitySuitableforHighReliabilityandAutomotiveRequirement •HighCurrentCapability •GlassPassivatedDieConstruction •ExcellentHigh-TemperatureStability •MeetsISO7637-2SurgeCapability •MeetsISO16750-2SurgeSpecificat

M8550S

Marking：M8550SZ；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES PowerDissipation

M8550S-TA

Marking：M8550SZ；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES PowerDissipation

MP86905GR

Marking：M86905；Package：QFN-23；Intelli-PhaseTM Solution with Integrated HS-/LS-FETs and Driver

DESCRIPTION TheMP86905isamonolithichalf-bridgewith built-ininternalpowerMOSFETsandgate drivers.TheMP86905achieves50Aof continuousoutputcurrentoverawideinput supplyrange. TheMP86905isamonolithicICapproachto driveupto50Aofcurrentper-phase.The integration

MP86920GLV

Marking：M86920；Package：LGA-27；Intelli-PhaseTM Solution with Integrated HS-/LS-FETs and Driver in LGA (4mmx5mm) Package

DESCRIPTION TheMP86920isamonolithichalf-bridgedriver withbuilt-ininternalpowerMOSFETsandgate drivers.Itachieves20Aofcontinuousoutput currentacrossawideinputsupplyrange. TheintegrateddriverandMOSFETSresultin highefficiencyduetoanoptimaldeadtimeand reduce