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BSN20-7

丝印:N20;Package:SOT-23;N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Sw

文件:122.19 Kbytes 页数:6 Pages

DIODES

美台半导体

BSN20BK

丝印:4S;Package:TO-236AB;60 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStati

文件:739.42 Kbytes 页数:16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BSN20W

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a 3 pin plastic SOT323 SMD package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Thin and thick film circuits • General purpose fast switching applications

文件:73.71 Kbytes 页数:8 Pages

PHI

飞利浦

PHI

BSN20_00

N-channel enhancement mode field-effect transistor

文件:296.13 Kbytes 页数:13 Pages

PHI

飞利浦

PHI

BSN20_15

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件:183.98 Kbytes 页数:6 Pages

DIODES

美台半导体

BSN20-7

丝印:N20;Package:SOT-23;N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件:183.98 Kbytes 页数:6 Pages

DIODES

美台半导体

BSN20BK_15

丝印:-4S;Package:SOT-23;60 V, N-channel Trench MOSFET

文件:280.82 Kbytes 页数:16 Pages

PHI

飞利浦

PHI

BSN20Q-7

丝印:N20;Package:SOT-23;N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件:183.98 Kbytes 页数:6 Pages

DIODES

美台半导体

BSN20

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation 50V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , other power management functions.

Diodes

美台半导体

BSN20BK

60 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Very fast switching\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection: 2 kV HBM;

Nexperia

安世

技术参数

  • Automotive Compliant PPAP:

    On Request*

  • Polarity:

    N

  • ESD Diodes:

    No

  • VDS:

    50 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    0.5 A

  • PD @ TA = +25°C:

    0.6 W

  • RDS(ON) Max @ VGS (10V):

    1800 mΩ

  • RDS(ON) Max @ VGS (4.5V):

    2000 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V):

    N/A mΩ

  • VGS (th) Max:

    1.5 V

  • QG Typ @ VGS = 4.5V (nC):

    N/A nC

  • QG Typ @ VGS = 10V (nC):

    800 nC

  • Packages:

    SOT23

供应商型号品牌批号封装库存备注价格
恩XP
24+
SOT23
8950
BOM配单专家,发货快,价格低
询价
恩XP
21+
SOT23
20000
原装现货假一罚十
询价
恩XP
16+
SOT23
13450
进口原装现货/价格优势!
询价
恩XP
1528+
SOT-23
3500
原装正品现货供应56
询价
恩XP
24+
SOT-23
264000
一级代理/全新现货/长期供应!
询价
恩XP
2019+
SOT-23
78550
原厂渠道 可含税出货
询价
恩XP
1143+
SOT-23
293
原装正品 可含税交易
询价
恩XP
2023+
SOT23
15000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
PHI
2021+
SOT-23
9000
原装现货,随时欢迎询价
询价
恩XP
23+
SOT23-3
25000
全新原装现货,假一赔十
询价
更多BSN20供应商 更新时间2025-10-9 13:40:00