BSN20-7

Marking：N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheonstateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowInputCapacitance •FastSw

BSN20BK

Marking：4S；Package：TO-236AB；60 V, N-channel Trench MOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •ElectroStati

BSN20W

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorina3pinplasticSOT323SMDpackage. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •Nosecondarybreakdown. APPLICATIONS •Thinandthickfilmcircuits •Generalpurposefastswitchingapplications

BSN20_00

N-channel enhancement mode field-effect transistor

BSN20_15

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

BSN20-7

Marking：N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

BSN20BK_15

Marking：-4S；Package：SOT-23；60 V, N-channel Trench MOSFET

BSN20Q-7

Marking：N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET