| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BSN20-7 | 丝印：N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Sw 文件：122.19 Kbytes 页数：6 Pages | DIODES 美台半导体 | DIODES | |
BSN20-7 | 丝印：N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET 文件：183.98 Kbytes 页数：6 Pages | DIODES 美台半导体 | DIODES | |
1.0W SURFACE MOUNT POWER ZENER DIODE Features • 1W Power Dissipation on FR-4 PCB • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability 文件：188.67 Kbytes 页数：3 Pages | DIODES 美台半导体 | DIODES | ||
Filter & Ring Core Chokes 文件：123.65 Kbytes 页数：5 Pages | POWER-ONE | POWER-ONE | ||
Filter & Ring Core Chokes 文件：123.65 Kbytes 页数：5 Pages | POWER-ONE | POWER-ONE |
详细参数
- 型号：
BSN20-7
- 功能描述：
MOSFET MOSFET
- BVDSS：
41V-60 41V-60V,SOT23,3K
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
SOT23-3 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
询价 | ||
DIODES/美台 |
25+ |
SOT23 |
33583 |
DIODES/美台全新特价BSN20-7即刻询购立享优惠#长期有货 |
询价 | ||
DIODES/美台 |
2021+ |
SOT23-3 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
DIODES/美台 |
25+ |
SOT23-3 |
25000 |
全新原装现货,假一赔十 |
询价 | ||
DIODES/美台 |
24+ |
SMD |
160488 |
明嘉莱只做原装正品现货 |
询价 | ||
DIODES |
21+ |
SOT-23-3 |
15000 |
全新原装 |
询价 | ||
DIODES/缇庡彴 |
23+ |
NA |
15000 |
鍘熻姝e搧宸ュ巶鐜拌揣 |
询价 | ||
DIODES/美台 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
询价 | ||
DIODES INCORPORATED |
2025+ |
SOT-23 |
2490 |
FET 类型N 通道
技术MOSFET（金属氧化物）
漏源电压（Vdss）50 V
25°C 时电流 - 连续漏极 (Id)500mA（Ta）
驱动电压（ Rds On， Rds On）4.5V，10V
不同 Id、Vgs 时导通电阻1.8 欧姆 @ 220mA，10V
不同 Id 时 Vgs(th)1.5V @ 250μA
不同 Vgs 时栅极电荷?(Qg)0.8 nC @ 10 V
V |
询价 | ||
DiodesZetex |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 |
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