BSN20-7

Marking：N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheonstateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowInputCapacitance •FastSw

DA227

Marking：N20；Package：SOT-343；Switching Diode

Features 1)Smallmoldtype.(UMD4) 2)Highreliability. Application Ultrahighspeedswitching

DA227

Marking：N20；Package：SOT-343；Switching diode

Features 1)Fourtypesofpackagingareavailable. 2)Highreliability. 3)Highspeed.(Typicalrecoverytime=1.5ns) 4)Suitableforhighpackingdensitylayout. Applications Ultrahighspeedswitching

DA227FH

Marking：N20；Package：SOT-343；Switching Diode

Features 1)Smallmoldtype.(UMD4) 2)Highreliability. Application Ultrahighspeedswitching

DDC144EH

Marking：N20；Package：SOT563；NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR

Features -EpitaxialPlanarDieConstruction -ComplementaryPNPTypesAvailable(DDA) -Built-InBiasingResistors -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFree.“Green”Device(Note3)

DDTC144EE-7-F

Marking：N20；Package：SOT523；NPN PRE-BIASED TRANSISTOR IN SOT523

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypesAvailable(DDTA) •Built-InBiasingResistors,R1=R2 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Forautomotiveapplicationsrequiringspecificchange

BSN20-7

Marking：N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

BSN20Q-7

Marking：N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

LN3420DT2AG

Marking：N20；Package：DFN2020-6S；30V N-Channel Enhancement MOSFET

LNB8206DT0AG

Marking：N20；Package：DFN3333-8A；N-Channel 20-V (D-S) MOSFET Low RDS(on) trench technology.