丝印：N3；Package：SOT-26；NPN general purpose double transistor

DESCRIPTION NPN transistor pair in a SOT457 (SC-74) plastic package. FEATURES • High current (500 mA) • 600 mW total power dissipation • Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS • General purpose switching and amplification • Push-pull amplifiers • Multi-

文件：135.47 Kbytes 页数：7 Pages

恩XP

丝印：N3；Package：SOT-26；NPN general purpose double

DESCRIPTION NPN transistor pair in a SOT457 (SC-74) plastic package. FEATURES • High current (500 mA) • 600 mW total power dissipation • Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS • General purpose switching and amplification • Push-pull amplifiers • Multi-

文件：135.47 Kbytes 页数：7 Pages

恩XP

丝印：N3；Package：SOT-363；NPN General Purpose Double Transistor

FEATURES ● High current(500mA). ● 200mW total power dissipation. ● Replaces two SOT323 packaged transistors. On same PCB area. APPLICATIONS ● General purpose switching and amplification. ● Puse-pull amplifiers. ● Multi-phase stepper motor drivers.

文件：713.94 Kbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：N3；Package：SC-74；NPN/NPN general purpose double transistors

Features and benefits • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：209.84 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：N3；Package：SOT-343N；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz rang

文件：304.75 Kbytes 页数：15 Pages

恩XP

丝印：N3；Package：SOT-343N；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：N3；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：73.09 Kbytes 页数：11 Pages

PHI

飞利浦

丝印：N3；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：690.77 Kbytes 页数：11 Pages

恩XP

丝印：N3；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：320.93 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：N3；Package：SC-76；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：306.61 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司