丝印：N306AD；Package：TO-251AA；N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：254.57 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：N306AD；Package：TO-252AA；N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：254.57 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：254.57 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司