丝印：N306AD；Package：TO-251AA；N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：254.57 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 30V, 50A, 6mΩ

General Description\nThis device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.\nOptimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequenci • Fast switching\n• rDS(ON) = 0.0052Ω (Typ), VGS = 10V\n• rDS(ON) = 0.0085Ω (Typ), VGS = 4.5V\n• Qg (Typ) = 30nC, VGS = 5V\n• Qgd (Typ) = 11nC\n• CISS (Typ) = 3400pFApplications\n• DC/DC converters ;

ONSEMI

安森美半导体

丝印：N306AD；Package：TO-252AA；N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：254.57 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

N-Channel 30-V (D-S) MOSFET

文件：1.14094 Mbytes 页数：8 Pages

VBSEMI

微碧半导体