EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT

General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO-220 plastic packages. This device

文件：196.02 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

ECOSPARK Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT

General Description The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D−Pak (TO−252), as well as the industry standard D2−Pak (TO−263), and TO−262 and TO−220 plastic packages. This device is intend

文件：3.91689 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT

文件：172.62 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IGBT，400V，17A，1.58V，300mJ，TO-220EcoSPARK® I，N 沟道点火

ISL9V3040D3S、ISL9V3040S3S、ISL9V3040P3和ISL9V3040S3是下一代点火IGBT，它们在节省空间的D-Pak (TO-252)、工业标准D²-Pak (TO-263)以及TO-262和TO-220塑料封装中提供出众的SCIS能力。 此器件设计用于车用点火电路，特别是电感驱动模块。 内部二极管提供电压钳位，无需外部组件。 • 节省空间的 D-Pak 封装 \n• 在TJ = 25oC时，SCIS能量 = 300mJ\n• 逻辑电平栅极驱动;

ONSEMI

安森美半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 430V 21A TO220-3

ONSEMI

安森美半导体

ECOSPARK Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT

Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application

文件：2.37105 Mbytes 页数：11 Pages

ONSEMI

安森美半导体

IGBT, 400V, 17A, 1.58V, 300mJ, TO-220EcoSPARK® I, N-Channel Ignition

The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO-220 plastic packages. This device is intended for use in • Logic Level Gate Drive\n• Logic Level Gate Drive\n• Space saving D-Pak package availability \n• SCIS Energy = 300mJ at TJ = 25oC;

ONSEMI

安森美半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：ECOSPARK1 IGN-IGBT TO220

ONSEMI

安森美半导体