DMN2009USS-13

Marking：N2009US；Package：SO-8；20V N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))andyetmaintainsuperiorswitchingperformance,makingit idealforhighefficiencypowermanagementapplications. Backlighting PowerManagementFunctions DC-DCConverters Features 

DMN2024UTS-13

Marking：N2024U；Package：TSSOP-8；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowGateThresholdVoltage LowOn-Resistance ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/101/

G2014

Marking：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description TheG2014usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ⚫Powerswitch ⚫DC/DCconverters

G2014A

Marking：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description TheG2014Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. AEC-Q101Qualified Application ⚫Powerswitch ⚫DC/DCconverters

ADN2004AS

Marking：N2004AS；Package：SOP-8；N-Channel Enhancement Mode Field Effect Transistor

ADN2005AS

Marking：N2005AS；Package：SOP-8；N-Channel Enhancement Mode Field Effect Transistor

FTK2012

Marking：N2012；Package：DFNWB2X2-6L-J；N-Channel MOSFET

YJQ2012A

Marking：N2012A；Package：DFN2020-6L；N-Channel Enhancement Mode Field Effect Transistor