丝印：4S；Package：TO-236AB；60 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStati

文件：739.42 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：-4S；Package：SOT-23；60 V, N-channel Trench MOSFET

文件：280.82 Kbytes 页数：16 Pages

PHI

飞利浦

60 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Very fast switching\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection: 2 kV HBM;

Nexperia

安世

FAIRCHILD/仙童
TO-92

FAIRCHILD/仙童

上传：深圳广友电子有限公司

PHILIPS/飞利浦
TO-92

PHI

上传：深圳市卓越微芯电子有限公司