N-channel enhancement mode TrenchMOS transistor

VDSS = 30 V ID = 6 A RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast s

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PHI

飞利浦

N-channel enhancement mode TrenchMOSÔ transistor

FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • Motor and rel

文件：208.19 Kbytes 页数：9 Pages

NEXPERIA

安世

N-channel enhancement mode TrenchMOS™ transistor

VDSS = 30 V\nID = 6 A\nRDS(ON) ≤ 100 mΩ (VGS = 10 V)\nRDS(ON) ≤ 200 mΩ (VGS = 4.5 V)GENERAL DESCRIPTION\nN-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.FEATURES\n• ’Trench’ technology\n• Low on-state resistance\n• Fast switching\n• High thermal cyc • ’Trench’ technology\n• Low on-state resistance\n• Fast switching\n• High thermal cycling performance\n• Low thermal resistanceApplications:-\n• Motor and relay drivers\n• d.c. to d.c. converters\n• Logic level translatorThe BSP100 is supplied in the SOT223 surface mounting package.;

恩XP

N-channel TrenchMOS intermediate level FET

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

动圈喇叭

BELLSING

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