AOD410N-G说明书PDF资料原装现货IDEC第6页-114ic电子网

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BD410	文件：72.17 Kbytes Page：3 Pages	NPNEPITAXILASILICONPOWERTRANSISTORS NPNEPITAXILASILICONPOWERTRANSISTORS TheyaresiliconepitaxialplanarNPNpowertransistorsmountedinaTO-126plasticpackage. AF-amplifierforhighsupplyvoltageTheyareintendedforcontrolcircuit,verticaloutputstagesinTVsets,andgeneralpurposeapplications.Complianceto	COMSET Comset Semiconductor	COMSET
BD410	文件：123.51 Kbytes Page：3 Pages	NPNEPITAXIALSILICONPOWERTRANSISTOR NPNEPITAXIALSILICONPOWERTRANSISTOR TO-126 PlasticPackage	CDIL CDIL	CDIL
BF410	文件：54.98 Kbytes Page：3 Pages	LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.	SIEMENS Siemens Ltd	SIEMENS
BF410A	文件：54.98 Kbytes Page：3 Pages	LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.	SIEMENS Siemens Ltd	SIEMENS
BF410A	文件：36.05 Kbytes Page：6 Pages	N-channelsiliconfield-effecttransistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BF410B	文件：36.05 Kbytes Page：6 Pages	N-channelsiliconfield-effecttransistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BF410B	文件：54.98 Kbytes Page：3 Pages	LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.	SIEMENS Siemens Ltd	SIEMENS
BF410C	文件：36.05 Kbytes Page：6 Pages	N-channelsiliconfield-effecttransistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BF410C	文件：54.98 Kbytes Page：3 Pages	LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.	SIEMENS Siemens Ltd	SIEMENS
BF410D	文件：36.05 Kbytes Page：6 Pages	N-channelsiliconfield-effecttransistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BF410D	文件：54.98 Kbytes Page：3 Pages	LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.	SIEMENS Siemens Ltd	SIEMENS
BFG410	文件：104.6 Kbytes Page：12 Pages	NPN22GHzwidebandtransistor DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Veryhighpowergain •Lownoisefigure •Hightransitionfrequency •Emitteristhermallead •Lowfeedbackcapacitance. APPLI	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG410W	文件：104.6 Kbytes Page：12 Pages	NPN22GHzwidebandtransistor DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Veryhighpowergain •Lownoisefigure •Hightransitionfrequency •Emitteristhermallead •Lowfeedbackcapacitance. APPLI	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG410W	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFP410	文件：579.47 Kbytes Page：8 Pages	LowNoiseSiliconBipolarRFTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BFP410	文件：551.66 Kbytes Page：8 Pages	NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor •Lowcurrentdevicesuitablee.g.forhandhelds •Forhighfrequencyoscillatorse.g.DROforLNB •ForISMbandapplicationslike AutomaticMeterReading,Sensorsetc. •TransitfrequencyfT=25GHz •Pb-free(RoHScompliant)andhalogen-freepa	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BPF-A410	文件：448.5 Kbytes Page：1 Pages	BandpassFilter	MINIMini-Circuits 微型电路	MINI
BRUS410	文件：75.57 Kbytes Page：2 Pages	ULTRA-FASTRECOVERY30to35AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING	edi edi	edi
BTM410	文件：1.51438 Mbytes Page：25 Pages	modulesfromLairdaredesignedtomeettheneedsofdeveloperswhowishtoaddrobust	LSTD Laird Tech Smart Technology	LSTD
BTS410E	文件：403.14 Kbytes Page：12 Pages	High-sideswitch PROFET® High-sideswitch Short-circuitprotection Overtemperatureprotection Overloadprotection Loaddumpprotection?) Undervoltageandovervollaﬂesshutdownwithauto-restartandhysteresis Reversebatteryprotection Inputandstatusprotection *Clampofnegativeoutput	SIEMENS Siemens Ltd	SIEMENS

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产品属性

产品编号：
AOD410N-G
制造商：
IDEC
类别：
开关 > 按钮开关
包装：
散装
描述：
PUSHBUTTON 30MM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	AOD410低压MOS管	VBSEMI/台湾微碧	23+	TO-252	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	AOD410低压MOS管	VBSEMI/台湾微碧	23+	TO-252	20000	原装正品欢迎咨询	询价
上海金庆电子技术有限公司	AOD411	ALPHA	新		100	全新原装货期两周	询价
深圳市大联智电子有限公司	AOD411	AOS	2022+	TO-252	7300	原装现货	询价
深圳市创新迹电子有限公司	AOD411	AOS	23+	TO-252	7300	专注配单,只做原装进口现货	询价
深圳市宏世佳电子科技有限公司	AOD411	AOS	2023+	TO-252	3685	全新原厂原装产品、公司现货销售	询价
深圳市安富世纪电子有限公司	AOD411	AOS	23+	TO-252	7300	专注配单,只做原装进口现货	询价
深圳市一线半导体有限公司	AOD4110	AO	07+	TO-252	35000		询价
深圳市科恒伟业电子有限公司	AOD4110	A0S	1844+	LQFP	9852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市百视威讯电子科技有限公司	AOD4110		23+	N/A	12550	正品授权货源可靠	询价

更多AOD410N-G供应商更新时间2024-5-21 11:00:00

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