N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specificatio

文件：115.94 Kbytes 页数：5 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 85A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：318.32 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：1.00097 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=20V,ID=45A,RDS(ON)

文件：1.09174 Mbytes 页数：5 Pages

DOINGTER

杜因特

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS=20V(Min) • Static Drain-Source On-Resistance : RDS(on) =18mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：309.84 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications). AO

文件：127.97 Kbytes 页数：5 Pages

AOSMD

万国半导体

100V N-Channel MOSFET

General Description The AOD4124 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpo

文件：268.63 Kbytes 页数：7 Pages

AOSMD

万国半导体

N-Channel MOSFET uses advanced SGT technology

Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=40A,RDS(ON)

文件：1.19977 Mbytes 页数：4 Pages

DOINGTER

杜因特

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

• FEATURES • With TO-252(DPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Load switching • General purpose applications • Switching a

文件：321.2 Kbytes 页数：2 Pages

ISC

无锡固电