N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications). AO

文件：127.97 Kbytes 页数：5 Pages

AOSMD

万国半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS=20V(Min) • Static Drain-Source On-Resistance : RDS(on) =18mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：309.84 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=20V,ID=45A,RDS(ON)

文件：1.09174 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

文件：179.34 Kbytes 页数：6 Pages

AOSMD

万国半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

N-Channel Enhancement Mode Field Effect Transistor

文件：179.34 Kbytes 页数：6 Pages

AOSMD

万国半导体